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GrandPower Components introduces new power electronics products and technologies for the following industrial applications: welding, battery charging, steel, aluminum, mining water, waste treatment, forklifts, overhead cranes, industrial motor control, transportation, power generation, wind turbines, solar inverters, energy storage, electric power transmission / distribution and many others.

GEN VII Power Module

Gen VII Power Module Series


ADDITIONAL FEATURED PRODUCTS

Schottky Diodes

5th Generation Schottky Diode
Half Bridge IGBT Module

Half Bridge IGBT
Module
Thick Film Resistor

Thick Film
Resistor

Vishay Releases 5th Generation Family of High-Performance 100-V Schottky Diodes That Offer Tj Max of +175 °C For High- Temperature Applications

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Vishay Releases New Series of Half-Bridge 600-V and 1200-V IGBT Modules With High Current Ratings from 75 A to 200 A in Int-A-Pak Package

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Vishay Releases New 35W Thick Film Power Resistor With 0.01Ω To 550kΩ Resistance Range

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Devices Gain 20 % Improvement in Thermal Performance with Exposed Direct Bonded Copper Substrate

MALVERN, PENNSYLVANIA. - Feb. 25, 2009 - Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled its Gen VII series of general-purpose high-voltage power modules, which feature increased current handling capability, lighter weight, lower thermal resistance, improved reliability and a totally lead (Pb)-free construction.

Packaged in the TO-240AA-compatible ADD-A-PAK, the Gen VII modules each integrate two active components in series and include standard diode, thyristor/diode, thyristor/thyristor, and Schottky rectifier combinations.

The new devices feature a high blocking voltage of up to 1600 V, a high dV/dt of 1000 V/µs, a high RMS voltage isolation capability of 3500 V, and a high surge capability of up to 3000 A. In addition to standard products with the configurations and ratings mentioned above, custom versions of the Gen VII modules, which can accommodate silicon die with dimensions up to 500 mils by 500 mils, are readily available with customer-specified parameters to deliver outstanding performance in specific applications.

Beyond being entirely lead (Pb)-free and RoHS-compliant, the new package construction of the Gen VII power modules eliminates the traditional copper base plate and instead features an exposed direct bonded copper substrate, which improves thermal performance by 20 % and reduces product weight to just 75 g. An aluminum/copper clad wire bond interconnection improves reliability during power cycling and increases repeatability in the manufacturing process. The new construction also serves to eliminate certain process steps requiring the use of chemicals, and thus promotes cleaner and more environmentally-friendly manufacturing.

Vishay's Gen VII power modules are typically used as the isolated power module in half-bridge, center-tab common anode, and common cathode configurations in high-voltage regulated power supplies, temperature and motor control circuits, uninterruptible power supplies (UPS), battery chargers, and many other industrial applications.

Current ratings for the Gen VII modules range from 26 A to 105 A for the diode and thyristor combinations and from 110 A to 400 A for the Schottky diode rectifier combinations. Reverse voltage ranges from 400 V to 1600 V for the diodes and thyristors and from 30 V to 150 V for the Schottky diode rectifiers. Maximum junction temperature ratings for modules range from 125 °C to 175 °C.

Gen VII Power Module Selected Product Specifications


Part number

Datasheet

Type

IT(AV) (A)

VRRM / VR (V)

TJ max (°C)

VSK.91..

94627

Standard Diodes

100

400 to 1600

150

VSK.91..

94632

Thyristor/Diode, Thyristor/Thyristor

95

400 to 1600

125

VSKU105.., VSKV105..

94656

Thyristor/Thyristor

105

400 to 1600

130

VSKDS440/030

94644

Schottky Rectifier

220

30

150

PDFGeneration VII of Diode and Thyristor Modules (PDF - 383KB)

PDFAdd-A-Pak Gen VII Power Modules (PDF - 247KB)

Samples and production quantities of Vishay's Gen VII power modules available at GrandPower Components Inc. Please call us at 1-800-274-4284 or contact us

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Vishay Releases 5th Generation Family of High-Performance 100-V Schottky Diodes That Offer Tj Max of +175 °C For High-Temperature Applications

Nine New Schottky Diode Devices Feature Very Low Typical Forward Voltage Drop From 0.55 V at 8 A to 0.61V at 30 A, Extremely Low Typical Reverse Leakage From 1 mA to 5.5 mA at 125 °C , and an Overall 30 % Increase in Power Density

MALVERN, PENNSYLVANIA - Jan. 30, 2008 - Vishay Intertechnology, Inc. (NYSE: VSH) today launched a new high-performance Schottky Diode Gen 5.0 silicon platform with eight new devices offering low forward voltage drop, low reverse leakage, and a high maximum junction temperature for high-temperature applications.

Featuring submicron trench technology, Vishay's new family of Schottky diodes offers a maximum junction temperature of +175 °C, making them suitable for automotive and other high-temperature applications. The devices are offered in small RoHS-compliant packages for improved cost-to-power ratios, with a reverse biased safe operating area (RBSOA) available for tight and cost-effective designs. A high and stable breakdown voltage (>115 V) accommodates voltage spikes and optimizes power density, which is increased in the diodes by 30 % compared with previous-generation products. Even so, the new devices are priced up to 10% lower than Vishay's planar Gen 3.1 and the planar Gen 2.0 devices.

The new Schottky diodes are optimized for ac-to-dc, secondary rectification, flyback, buck and boost converters, half-bridge, reverse battery protection, freewheeling, class-D amplifiers, and dc-to-dc module applications. Typical end products include high power density SMPS; adaptors for desktop PCs; servers; automotive drives and controls; telecom networks; consumer electronics like PDPs, LCDs, and high-efficiency audio systems; and mobile electronics such as notebook computers, cell phones, and portable media players.
The devices offer a very low typical forward voltage drop from 0.55 V at 8 A to 0.61 V at 30 A, and extremely low typical reverse leakage from 1 mA to 5.5 mA at 125 °C, with very tight parameter distribution. They feature increased ruggedness for reverse avalanche capability, with parts 100 % screened in avalanche, and negligible switching losses.

Device Specification Table


Device

IF(AV)
(A)

@ TC (°C)

VFM@ 125°C
(Typ) (V)

Reverse Leakage

EAS
(mJ)

TJ Max
(°C)

Package

25 °C (µA)

Typ @ 125 °C (mA)

8TT100

8

163 °C

0.55 at 8 A

65

1

67

175 °C

TO-220AC

MBR10T100

10 A

159 °C

0.62 at 10 A

100

1.2

54

175 °C

TO-220AC

16CTT100

2x8 A

163 °C

0.55 at 8 A

65

1

67

175 °C

TO-220AB

MBR20T100CT

2x10 A

159 °C

0.62 at 10 A

100

1.2

54

175 °C

TO-220AB

20TT100

20 A

160 °C

0.63 at 20 A

150

3

67.5

175 °C

TO-220AC

43CTT100

2x20 A

160 °C

0.63 at 20 A

150

2.5

67.5

175 °C

TO-220AB

30PT100

30 A

156 °C

0.61 at 30 A

200

5.5

135

175 °C

TO-247

63CPT100

2x30 A

156 °C

0.61 at 30 A

200

5.5

135

175 °C

TO-247

Samples and production quantities of the new 5th generation family of Schottky diodes are available now, with lead times of eight to 10 weeks for larger orders.

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Vishay Releases New Series of Half-Bridge 600-V and 1200-V IGBT Modules With High Current Ratings from 75 A to 200 A in Int-A-Pak Package

Standard and Ultrafast Devices Offer Standard PT, Generation 4, and Generation 5 NPT IGBT Technologies for Hard Switching Operating Frequencies up to 60 kHz, and > 200 kHz in Resonant Mode

MALVERN, PENNSYLVANIA. - March 14, 2008 - Vishay Intertechnology, Inc. (NYSE: VSH) today launched a new series of half-bridge insulated-gate bipolar transistors (IGBT) in the industry-standard Int-A-Pak package. The IGBT module series consists of eight 600-V and 1200-V devices that offer a variety of technologies for high hard switching operating frequencies in standard and Ultrafast speeds.

The eight new devices released today feature three different IGBT technologies to meet a variety of application needs. The GA100TS60SFPbF and GA200HS60S1PbF offer standard punch-through (PT) IGBT technology, while the GA200TS60UPbF, GA75TS120UPbF, and GA100TS120UPbF devices utilize Generation 4 technology for tighter parameter distribution and high efficiency. The GB100TS60NPbF, GB150TS60NPbF, and GB200TS60NPbF modules offer Generation 5 non-punch-through (NPT) technology for the added benefit of 10-µs short circuit capabilities.

The GA100TS60SFPbF and GA200HS60S1PbF are standard-speed devices optimized for hard switching operating frequencies up to 1 kHz. The other six IGBTs modules are ultrafast modules co-packaged with HEXFRED® ultra-soft-recovery anti-parallel diodes for use in bridge configurations. The Ultrafast devices are designed for high operating frequencies from 8 kHz to 60 kHz in hard switching, and > 200 kHz in resonant mode.

Featuring high current ratings from 75 A to 200 A with low power losses, Vishay.s new IGBT series is optimized for isolated and non-isolated converters, switches, inverters, and choppers in high-frequency industrial welding, UPS, SMPS, solar inverter, and motor drive applications. For output inverter TIG welder applications, the IGBTs offer the lowest Vce(on) at rated current available in the market for "S" series modules.
 
The new IGBTs IGBT modules are lead (Pb)-free and provide simple, direct mounting to the heatsink. The devices offer low EMI for less snubbing, and provide very low junction to case thermal resistance.

Device Specification Table:


P/N

Speed

Technology

Voltage

IC

VCE(ON) typ.

GA100TS60SFPbF

Standard

Generation 4 PT

600 V

100 A

1.39 V

GA200HS60S1PbF

Standard

Generation 4 PT

600 V

200 A

1.13 V

GA200TS60UPbF

Ultrafast

Generation 4 PT

600 V

200 A

1.74 V

GA75TS120UPbF

Ultrafast

Generation 4 PT

1200 V

75 A

2.5 V

GA100TS120UPbF

Ultrafast

Generation 4 PT

1200 V

100 A

2.25 V

GB100TS60NPbF

Ultrafast

Generation 5 NPT

600 V

100 A

2.6 V

GB150TS60NPbF

Ultrafast

Generation 5 NPT

600 V

150 A

2.64 V

GB200TS60NPbF

Ultrafast

Generation 5 NPT

600 V

200 A

2.6 V

Samples and production quantities are available at GrandPower Components Inc. Please call us at 1-800-274-4284 or contact us.

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Vishay Releases New 35W Thick Film Power Resistor With 0.01Ω To 550kΩ Resistance Range
June 30, 2008

Vishay Intertechnology, Inc. released a new 35W thick film power resistor featuring what is described as a compact, easy-to-mount TO-263 package (D²PAK) and a broad range of resistance values.

The new D2TO35 thick film resistor is non-inductive and provides a wide resistance range of 0.01Ω to 550kΩ. Packaged in the small TO-263, which measures 10.1 x 10.4mm with a 4.5mm profile, it is claimed that the resistor saves valuable space on the circuit board, allowing designers to reduce the size of their end products.

The thick film resistor is intended for power supply, current sensing, power conversion, high-speed switching, RF, pulse generation, load resistor, snubber, pulse-handling circuit, and amplifier applications in end products including industrial welding machines, test equipment, UPS, locomotive, automotive, and base station systems.
Thermal resistance for the D2TO35 at 35W and +25°C is 4.28°C/W junction-to-case. The resistor features a standard temperature coefficient of ±150ppm/°C at resistance values of ≥ 0.5Ω, with standard tolerances of ±1% to ±10%.

Connections for the new thick film resistor are tinned copper, and they are specified for operation over a -55 to +175°C temperature range. The device is RoHS-compliant, and supports soldering temperatures at +270°C.

Samples and production quantities are available at GrandPower Components Inc. Please call us at 1-800-274-4284 or contact us.

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GrandPower Components | Power Electronic Component Replacement and Cross-Reference Specialists